st2306srg n channel enhancement mode mosfet 3.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2306srg 2005. v1 description st2306srg is the n-channel logic enhancement mode p ower field effect transistor which is produced using high cell density, dmos tre nch technology. this high density process is especially tailored to minimize on-state resistance. these devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low in-line power loss are required. the product is in a very small o utline surface mount package. pin configuration sot-23 1.gate 2.source 3.drain part marking sot-23 y: year code a: process code ordering information part number package part marking st2306srg sot-23 04ya process code : a ~ z ; a ~ z feature 30v/3.2a, r ds(on) = 45m-ohm (typ.) @vgs = 10.0v 30v/2.0a, r ds(on) = 62m-ohm @vgs = 4.5v 30v/1.5a, r ds(on) =92 m-ohm @vgs = 2.5v super high density cell design for extremely low r ds(on) exceptional on-resistance and maximum dc current capability sot-23 package design 3 1 2 d g s 3 1 2 04ya
st2306srg n channel enhancement mode mosfet 3.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2306srg 2005. v1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain currenttj=150 ) t a =25 t a =70 i d 3.2 2.6 a pulsed drain current i dm 10 a continuous source current (diode conduction) i s 1.20 a power dissipation t a =25 t a =70 p d 1.20 0.8 w operation junction temperature t j 150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 100 /w
st2306srg n channel enhancement mode mosfet 3.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2306srg 2005. v1 electrical characteristics ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 v gate threshold voltage v gs(th) v ds =vgs,i d =250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds =30v,v gs =1.0v 1 ua v ds =30v,v gs =0v t j =55 10 drain-source on-resistance r ds(on) v gs =10v,i d =3.2a v gs =4.5v,i d =2.0a v gs =2.5v,i d =1.5a 0.045 0.062 0.092 0.052 0.067 0.100 forward transconductance g fs v ds =4.5v,i d =2.5v 4.6 s diode forward voltage v sd i s =1.25a,v gs =0v 1.2 v dynamic total gate charge q g v ds =15v v gs =10v i d 2.5a 4.5 10 nc gate-source charge q gs 0.8 gate-drain charge q gd 1.0 input capacitance c iss v ds =15v v gs =0v f=1mh z 240 pf output capacitance c oss 110 reverse transfer capacitance c rss 17 turn-on time t d(on) tr v dd =15v r l =15 i d =1.0a v gen =10v r g =6 8.0 20 ns 12 30 turn-off time t d(off) tf 17 35 8.0 20
st2306srg n channel enhancement mode mosfet 3.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2306srg 2005. v1 typical characterictics (25 unless noted)
st2306srg n channel enhancement mode mosfet 3.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2306srg 2005. v1 typical characterictics (25 unless noted)
st2306srg n channel enhancement mode mosfet 3.2a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st2306srg 2005. v1 sot-23 package outline
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